Method for anisotropically etching tungsten using SF.sub.6, CHF.sub.3, and N.sub.2
US5866483A · kind A · utility
239Cited by
18References
22Claims
0Family size
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Key dates
| Filing date | Apr 4, 1997 |
| Grant date | Feb 2, 1999 |
| Priority date | — |
| Expiry date | Apr 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a tungsten containing layer 25 on a substrate 10 substantially anisotropically, with good etching selectivity, and without forming excessive passivating deposits on the etched features. In the method, the substrate 10 is placed in a plasma zone 55, and process gas comprising SF.sub.6, CHF.sub.3, and N.sub.2, is introduced into the plasma zone. A plasma is formed from the process gas to anisotropically etch the tungsten containing layer 22. Preferably, the plasma is formed using combined inductive and capacitive plasma operated at a predefined inductive:capacitive power ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.