Semiconductor device and method of manufacturing the same
US5866930A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1996 |
| Grant date | Feb 2, 1999 |
| Priority date | — |
| Expiry date | Aug 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a first conducting layer, a first insulating layer formed on the first conducting layer, a second conducting layer formed on the first insulating layer and facing the first conducting layer, wherein, at least part of a peripheral portion of the region of at least one of the first and second conducting layers, in contact with the first insulating layer, includes an amorphous conducting layer made of a semiconductor, and the amorphous conducting layer contains at least one element selected from the group consisting of oxygen, nitrogen, carbon, argon, chlorine, and fluorine and a total concentration of the at least one element falls within the range from 0.1 atomic % to 20 atomic %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.