Shigehiko Saida
25Patents
11h-index
22Co-inventors
75Inventor score
Filing activity: Mar 13, 1996 → Apr 27, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6333547A | Semiconductor device and method of manufacturing the same | Electricity | 68 | Expired |
| US6903422B2 | Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems | Electricity | 35 | Expired |
| US6284583A | Semiconductor device and method of manufacturing the same | Electricity | 34 | Expired |
| US5869858A | Semiconductor device for reducing variations in characteristics of the device | Electricity | 30 | Expired |
| US7372113B2 | Semiconductor device and method of manufacturing the same | Electricity | 29 | Expired |
| US5866930A | Semiconductor device and method of manufacturing the same | Electricity | 27 | Expired |
| US6326658A | Semiconductor device including an interface layer containing chlorine | Electricity | 26 | Expired |
| US5949102A | Semiconductor device having a gate electrode with only two crystal grains | Electricity | 25 | Expired |
| US6774462B2 | Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio | Electricity | 19 | Expired |
| US6790723B2 | Semiconductor device and method of manufacturing the same | Electricity | 11 | Expired |
| US6146938A | Method of fabricating semiconductor device | Electricity | 11 | Expired |
| US7081386B2 | Semiconductor device and method of manufactuing the same | Electricity | 8 | Expired |
| US6713359B1 | Semiconductor device and method of manufacturing the same including raised source/drain comprising SiGe or SiC | Electricity | 6 | Expired |
| US6794713B2 | Semiconductor device and method of manufacturing the same including a dual layer raised source and drain | Electricity | 6 | Expired |
| US7060555B2 | Semiconductor device and method of manufacturing the same | Electricity | 4 | Expired |
| US7098115B2 | Semiconductor device and method of manufacturing the same | Electricity | 4 | Expired |
| US6772045B2 | System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7148158B2 | Semiconductor device and method for manufacturing the same | Electricity | 2 | Expired |
| US7129132B2 | Semiconductor device and method of manufacturing the same | Electricity | 2 | Expired |
| US6538271B2 | Semiconductor device and method of manufacturing the same | Electricity | 1 | Expired |
| USRE46122E1 | Semiconductor device and method of manufacturing the same | General | 0 | Active |
| US7541233B2 | Semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
| US6841850B2 | Semiconductor device having silicon nitride film and silicon oxide film, and method of fabricating the same | Electricity | 0 | Expired |
| US6992020B2 | Method of fabricating semiconductor device | Electricity | 0 | Expired |
| US7612401B2 | Non-volatile memory cell | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.