High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US5867429A · kind A · utility
820Cited by
14References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 19, 1997 |
| Grant date | Feb 2, 1999 |
| Priority date | — |
| Expiry date | Nov 19, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5649
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Electric field coupling between floating gates of a high density flash EEPROM cell array has been found to produce errors in reading the states of the cells, particularly when being operated with more than two storage states per cell. The effect of this coupling is overcome by placing a conductive shield or insulating material with a low dielectric constant between adjacent floating gates, and/or by compensating for the coupling when reading the states of the cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.