Sandisk, Inc.
1,350Patents
671Active
1,350Granted
72Portfolio score
Filing activity: Sep 13, 1991 → Aug 9, 2023 · 652 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6222762A | Multi-state memory | Physics | 1,004 | Expired |
| US5867429A | High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates | Physics | 820 | Expired |
| US6522580B2 | Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states | Physics | 790 | Expired |
| US7020017B2 | Variable programming of non-volatile memory | Physics | 714 | Expired |
| US6456528B1 | Selective operation of a multi-state non-volatile memory system in a binary mode | Physics | 705 | Expired |
| US7196928B2 | Compensating for coupling during read operations of non-volatile memory | Physics | 645 | Expired |
| US6230233A | Wear leveling techniques for flash EEPROM systems | Physics | 553 | Expired |
| US5657332A | Soft errors handling in EEPROM devices | Physics | 540 | Expired |
| US6956770B2 | Non-volatile memory and method with bit line compensation dependent on neighboring operating modes | Physics | 531 | Expired |
| US5602987A | Flash EEprom system | Physics | 527 | Expired |
| US5661053A | Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers | Emerging Cross-Sectional Technologies | 521 | Expired |
| US5930167A | Multi-state non-volatile flash memory capable of being its own two state write cache | Physics | 505 | Expired |
| US7187585B2 | Read operation for non-volatile storage that includes compensation for coupling | Physics | 500 | Expired |
| US7869273B2 | Reducing the impact of interference during programming | Physics | 473 | Active |
| US6987693B2 | Non-volatile memory and method with reduced neighboring field errors | Physics | 471 | Expired |
| US7898864B2 | Read operation for memory with compensation for coupling based on write-erase cycles | Physics | 437 | Active |
| US5532962A | Soft errors handling in EEPROM devices | Physics | 435 | Expired |
| US5663901A | Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems | Electricity | 433 | Expired |
| US7535769B2 | Time-dependent compensation currents in non-volatile memory read operations | Physics | 416 | Active |
| US7602647B2 | System that compensates for coupling based on sensing a neighbor using coupling | Physics | 413 | Active |
| US6426893B1 | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks | Physics | 412 | Expired |
| US7012835B2 | Flash memory data correction and scrub techniques | Physics | 377 | Expired |
| US6081447A | Wear leveling techniques for flash EEPROM systems | Physics | 374 | Expired |
| US5890192A | Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM | Physics | 332 | Expired |
| US6850443B2 | Wear leveling techniques for flash EEPROM systems | Physics | 331 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.