Partial clean fluorine thermal cleaning process
US5868852A · kind A · utility
9Cited by
11References
11Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 18, 1997 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Feb 18, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4412
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for the dynamic cleaning of semiconductor fabrication equipment and particularly quartzware with a thermally activated source of fluorine, such as nitrogen trifluoride, at an elevated temperature, typically at the process operation temperature, wherein the cleaning is terminated prior to complete cleaning and removal of undesired substances allowing rapid restart of fabrication equipment so cleaned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.