Surface processing method and surface processing device for silicon substrates
US5868855A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1996 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Mar 7, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon wafer is set in a processing bath and an HF water solution and ozone water are respectively supplied from an HF line and ozone water line into the processing bath via an HF valve and ozone water valve to create a mixture. The mixture contains an HF water solution with a concentration of 0.01% to 1% and ozone water with a concentration of 0.1 ppm to 20 ppm, has substantially the same etching rate for silicon and for silicon oxide film and is used at a temperature in the range of 10.degree. to 30.degree. C. The silicon wafer and the silicon oxide film formed on part of the surface of the wafer can be simultaneously cleaned by use of the above mixture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.