Method to correct astigmatism of fourth yag to enable formation of sub 25 micron micro-vias using masking techniques
US5868950A · kind A · utility
25Cited by
43References
62Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 8, 1996 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Nov 8, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a via in a laminated substrate by placing a first mask between an output optics of a laser and an exposed surface of a laminated substrate. The first mask has a first aperture corresponding to a location of a via in the substrate. A second mask is placed between the first mask and the output optics of the laser. The second mask has a second aperture disposed within a main beam of a laser beam output from the laser and blocks side lobes of the laser beam from reaching the exposed surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.