Method of manufacturing semiconductor device
US5869363A · kind A · utility
141Cited by
46References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1996 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Dec 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, a first heat treatment for crystallization is conducted after nickel elements are introduced in an amorphous silicon film. Then, after the crystalline silicon film is obtained, a heat treatment is again conducted through the heating method which is identical with the first heat treatment. In this state, HCl or the like is added to the atmosphere to conduct gettering of the nickel elements remaining in the crystalline silicon film. With this process, there can be obtained a crystalline silicon film low in the concentration of the metal elements and high in crystallinity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.