Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof
US5869803A · kind A · utility
67Cited by
12References
65Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1995 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Jun 5, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of forming a polycrystalline silicon thin film includes irradiating an amorphous silicon layer with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J. The laser device includes an homogenizer movably mounted at the end of the optical path of the laser beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.