Resonant tunneling memory
US5869845A · kind A · utility
167Cited by
1References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 26, 1997 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Jun 26, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5614
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A resonant tunneling diode stack used as a memory cell stack (X0-Xn) with sequential read out of bits of data cells (X1-Xn) by increasing ramp rates to transfer the stored bit to a lowest ramp rate cell (X0).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.