Microelectronic device with thin film electrostatic discharge protection structure
US5869869A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 31, 1996 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Jan 31, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Microelectronic devices are formed on a substrate of an integrated circuit. An electrically conductive ground or power plane, and an ElectroStatic Discharge (ESD) protection layer are formed on the substrate. Terminals such as solder ball or wire bond pads are formed on the substrate, and are electrically connected to the devices. The protection layer is patterned such that portions thereof are disposed between the terminals and the plane to define vertical electrical discharge paths. The protection layer is formed of a material such as SurgX.TM. which is normally dielectric, and is rendered conductive in the discharge paths by an electrostatic potential applied to the terminals during an ESD event to shunt the electrostatic potential from the terminals to the plane. Alternatively, the protection layer can be formed between the terminals to define lateral discharge paths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.