Semiconductor integrated circuit device and manufacturing method for the same
US5869872A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1997 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Nov 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor integrated circuit device having an SOI structure is capable of preventing occurrence of leak current flowing from a diffusion layer even when a semiconductor element having a pn-junction is included in the semiconductor substrate. The semiconductor integrated circuit device having the SOI structure is formed with a semiconductor layer, or SOI layer, on a p-type semiconductor substrate through a buried insulating film and further with semiconductor circuit elements serving as functional elements at the SOI layer thus formed. As a protection transistor to protect the semiconductor circuit elements, a MOSFET may be formed in which n-type diffusion layers are formed in the semiconductor substrate. The n-type diffusion layers of the MOSFET are to be surrounded by p-type diffusion layers more highly doped than the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.