Semiconductor strain sensor
US5869876A · kind A · utility
14Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 1997 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Jan 24, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor strain sensor has a gauge forming region on a p-type substrate surrounded by a p-type isolation region that reaches the p-type substrate. The p-type substrate is etched so that the entire bottom surface of the gauge forming region is covered by the p-type substrate, and the p-type substrate or p-type isolation region is not exposed to the etched recess portion or isolation groove, each of which have a relatively high number of defects. Thus, leakage current at the PN junction can be decreased to decrease a variation in the potential of the gauge forming region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.