Seiichiro Ishio
29Patents
14h-index
33Co-inventors
77Inventor score
Filing activity: Dec 23, 1996 → Jun 8, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6065341A | Semiconductor physical quantity sensor with stopper portion | Physics | 74 | Expired |
| US6422088B1 | Sensor failure or abnormality detecting system incorporated in a physical or dynamic quantity detecting apparatus | Physics | 72 | Expired |
| US7355388B2 | Rotation detecting device using magnetic sensor | Electricity | 59 | Expired |
| US6744258B2 | Capacitive sensor apparatus | Physics | 47 | Expired |
| US6276207A | Semiconductor physical quantity sensor having movable portion and fixed portion confronted each other and method of manufacturing the same | Physics | 44 | Expired |
| US6584852B2 | Electrical capacitance pressure sensor having electrode with fixed area and manufacturing method thereof | Physics | 38 | Expired |
| US6199430A | Acceleration sensor with ring-shaped movable electrode | Physics | 37 | Expired |
| US6495389B2 | Method for manufacturing semiconductor pressure sensor having reference pressure chamber | Performing Operations; Transporting | 27 | Expired |
| US6448624B1 | Semiconductor acceleration sensor | Electricity | 23 | Expired |
| US6521966B1 | Semiconductor strain sensor | Electricity | 18 | Expired |
| US6640643B2 | Capacitive pressure sensor with multiple capacitive portions | Physics | 17 | Expired |
| US6694814B2 | Dynamic sensor having capacitance varying according to dynamic force applied thereto | Physics | 15 | Expired |
| US6925885B2 | Pressure sensor | Electricity | 14 | Expired |
| US6653702B2 | Semiconductor pressure sensor having strain gauge and circuit portion on semiconductor substrate | Performing Operations; Transporting | 14 | Expired |
| US5869876A | Semiconductor strain sensor | Physics | 14 | Expired |
| US6789431B2 | Diaphragm-type semiconductor pressure sensor | Physics | 11 | Expired |
| US6897669B2 | Semiconductor device having bonding pads and probe pads | Electricity | 8 | Expired |
| US6802222B2 | Diaphragm-type semiconductor device and method for manufacturing diaphragm-type semiconductor device | Physics | 7 | Expired |
| US7141966B2 | Rotation detecting apparatus | Physics | 7 | Expired |
| US6143584A | Method for fabrication of a semiconductor sensor | Physics | 6 | Expired |
| US6933582B2 | Semiconductor sensor having a diffused resistor | Electricity | 6 | Expired |
| US6270685A | Method for producing a semiconductor | Physics | 6 | Expired |
| US7105910B2 | Semiconductor device having SOI construction | Electricity | 5 | Expired |
| US7253601B2 | Current sensor having hall element | Physics | 5 | Active |
| US6647795B2 | Capacitive physical load sensor and detection system | Physics | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.