Proximity laser doping technique for electronic materials
US5871826A · kind A · utility
26Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 1996 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | May 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02686
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method of altering the electrical characteristics of a material through a laser ablation process. It can achieve high doping levels and shallow junctions at low temperatures, which are desirable in the fabrication of thin film transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.