Method for etching a semiconductor method for fabricating semiconductor device method for fabricating semiconductor laser and semiconductor laser
US5872022A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1995 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | Sep 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of etching a III-V compound semiconductor uses an etching gas including the group V element of the III-V compound semiconductor substrate layer while keeping the III-V compound semiconductor layer at a temperature higher than the crystal growth temperature of the III-V compound semiconductor. Etching using this method provides a higher degree of controllability than wet etching. In addition, because no etching solution is employed, the etching method can be employed in a crystal growth apparatus. Further, because an element of the III-V compound semiconductor layer is employed in the etching gas, incorporation of residual impurities can be prevented, keeping the etched surface clean.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.