DSAD process for deposition of inter layer dielectric
US5872064A · kind A · utility
14Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1997 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | Jul 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing an inter layer dielectric. A first layer using plasma enhanced chemical vapor deposition (CVD) is deposited. It is followed by a second layer, deposited using sub atmospheric CVD. The second layer is argon sputter etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.