Semiconductor device having a fuse layer
US5872389A · kind A · utility
5Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1996 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | Jun 28, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Burst pressure P of an insulating layer positioned immediately on a fuse layer is defined by using planar width W of fuse layer and thickness t of insulating layer. The value of the planar width W of fuse layer and the value of the thickness t of insulating layer are set such that the value of burst pressure P is at most about 1000 kg/cm.sup.2. The value of the thickness t and the value of the planar width W are set such that the value t/W is at least 0.45 and at most 0.91. Consequently, stable fuse blowing becomes possible while reducing manufacturing cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.