Inventor · Yokohama, JP

Masanao Maruta

5Patents
4h-index
13Co-inventors
50Inventor score

Filing activity: Jun 28, 1996 → Jul 5, 2012

Most-cited inventions

PatentTitleAreaCited byStatus
US6411560B1 Semiconductor memory device capable of reducing leakage current flowing into substrate Physics 25 Expired
US6466509B1 Semiconductor memory device having a column select line transmitting a column select signal Physics 10 Expired
US8723998B2 Solid-state image pickup device Electricity 5 Active
US5872389A Semiconductor device having a fuse layer Electricity 5 Expired
US6885235B2 Semiconductor integrated circuit device with internal power supply potential generation circuit Physics 4 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.