Deposition of an inter layer dielectric formed on semiconductor wafer by sub atmospheric CVD
US5872401A · kind A · utility
25Cited by
11References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 29, 1996 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | Feb 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing an inter layer dielectric. A first layer using plasma enhanced chemical vapor deposition (CVD) is deposited. It is followed by a second layer, deposited using sub atmospheric CVD. The second layer is argon sputter etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.