Dry etching of layer structure oxides
US5873977A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Feb 22, 1995 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Feb 22, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/082
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning layered structure oxide thin films involving placing the layered structure thin film (with or without a mask) laid on a substrate into a chamber which is partially filled with CHC1FCF.sub.3 gas and producing a glow discharge to cause the etching of the thin film ferroelectric material. The method provides high etch rates, good etch anisotropy and good etch uniformity. For example, for SBT and SBN thin films, the etch process provides etch rates in the range of 2.5 to 17.5 nm/min depending on the etch conditions and minimal etch residues at the end of the etch process is removed easily by low temperature (250.degree. C.) baking. Also, the method provides good etch selectivity in the films and minimal surface damage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.