Plasma processing apparatus and plasma processing method
US5874012A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1996 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Mar 8, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus is provided. In the apparatus, an inside surface of a process chamber is prevented from having its quality varied or becoming a heavy metal contamination source by plasma in the chamber, and at the same time the plasma characteristic is stabilized over time. In a plasma processing apparatus including a plasma generating unit, a process chamber capable of having its inside pressure reduced, a gas supply system for supplying a gas to the process chamber, a sample table for holding a sample and a vacuum pumping system, the process chamber has an outer cylinder capable of withstanding depressurization and an inner cylinder arranged inside the outer cylinder and being spaced therefrom through a gap, and a heater and a temperature control are provided in the outer cylinder. A non-magnetic metallic material not containing heavy metals, or ceramic, carbon, silicon or quartz is used for the inner cylinder. The temperature of the inner cylinder is controlled to a desired value by heating the outer cylinder using the heater and the temperature control. By controlling the temperature of the inner cylinder to, for example, 100.degree. C. to 350.degree. C., the surf…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.