Polycide etching with HCL and chlorine
US5874363A · kind A · utility
26Cited by
10References
10Claims
0Family size
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Key dates
| Filing date | May 13, 1996 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | May 13, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal silicide is removed at a faster rate than polysilicon in dry etching of metal silicide/polysilicon composites with an etching gas made from HCl and Cl.sub.2 at a volumetric flowrate ratio of HCl:Cl.sub.2 within the range of 3:1 to 5:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.