Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
US5874364A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1996 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Mar 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device comprises at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.