Method for etching a semiconductor substrate and etching system

US5874366A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Roland Sporer · Hohenpeißenberg, DE
• Josef Mathuni · Munich, DE
• Alexander Gschwandtner · Hersbruck, DE

Key dates

• Filing date: May 27, 1997
• Grant date: Feb 23, 1999
• Expiry date: May 27, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02052
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The method and system of the invention allow etching even relatively thick layers on the rear side of a semiconductor substrate where the front side is resist-free. An etching solution is sprayed in fine droplets onto the rear side of the semiconductor substrate. The semiconductor substrate may thereby be heated to a temperature .ltoreq.100.degree. C.