High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5874747A · kind A · utility
259Cited by
9References
32Claims
0Family size
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Key dates
| Filing date | Nov 24, 1997 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Nov 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8142
Abstract
A green-blue to ultraviolet light emitting semiconductor laser having a top contact, a Bragg reflector, cladding layer, active layer, cladding layer, buffer, substrate, bottom contact and a passivation layer. The key aspect is a Ga*N material on a base structure comprising a SiC substrate selected from a group consisting of 2H-SiC, 4H-SiC and a-axis oriented 6H-SiC. Furthermore, the cladding layers have larger band gaps than the active layer and are complimentarily doped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.