Semiconductor device with enhanced thermal conductivity
US5874777A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1996 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Dec 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device high in speed and in reliability by formation of interlayer dielectric films capable of rapidly transmitting heat as generated at wiring lines and yet less in capacitance. The semiconductor device of the present invention has multi-layered low-resistance wiring lines such as metal layers as stacked or laminated on a top surface and/or a bottom surface of a conductive substrate with a first dielectric material being sandwiched between adjacent ones thereof, featured in that said first dielectric material between said low-resistance wiring layers has a through-hole formed therein, and that said through-hole comprises a hole (through-hole: TH) filled with at least a conductive material, and a hole (dummy hole; DH) filed with a second dielectric material having thermal conductivity greater than that of said first dielectric material. Furthermorer the device is featured by having similar TH and DH between said low-resistance wiring lines and said conductive substrate, or between a specific low-resistance wiring line positioned at the uppermost layer of said low-resistance wiring lines and a heat release device also.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.