Multi-port multiple-simultaneous-access DRAM chip
US5875470A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1997 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Apr 29, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4097
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provides within a semiconductor chip a plurality of internal DRAM arrays connected to each section data bus. A cross-point switch simultaneously connects the plural section data buses to a corresponding plurality of port registers that transfer data between a plurality of ports (I/O pins) on the chip and the section data buses in parallel in either data direction to effectively support a high multi-port data rate to/from the memory chip. For any section, the data may be transferred entirely in parallel between the associated port and a corresponding port register, or the data may be multiplexed between each port and its port register in plural sets of parallel bits. Each of the DRAM banks in the chip is addressed and accessed in parallel with the other DRAM banks through a bank address control in the chip which receives all address requests from four processors in a computer system. Each section data bus is comprised of a large number of data lines that transfer data bits in parallel to/from all of DRAM cells in an address-selected row in one of the DRAM banks at a time in each section. The four DRAM section buses in the chip may be transferring data at the same time in independent…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.