Chemically amplified positive resist composition
US5876900A · kind A · utility
41Cited by
7References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1997 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Apr 1, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/106
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polyhydroxystyrene having phenolic hydroxyl groups some of which are protected with alkoxyalkyl groups and having a weight-average molecular weight of 3,000-300,000 and a dispersity of 1.0 to 1.5, (C) a photoacid generator, and (D) a vinyl ether group-containing compound. The composition is sensitive to actinic radiation, especially KrF excimer laser beam, has high sensitivity and resolution, and forms a resist pattern having improved plasma etching resistance and heat resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.