Modified poly-buffered locos forming technology avoiding the positive charge trapping at the beak of field oxide
US5877073A · kind A · utility
4Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 7, 1996 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | May 7, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabrication of modified poly-buffered LOCOS without positive charges trapping at the beak of the field oxide. The method employs DIW (Deionized Water) to be sprayed onto the wafer before gate electrode forming to eliminate the trapping of positive charges and reduce the undesired charge breakdown thereby increasing the yield of devices not containing this defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.