Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen
US5877095A · kind A · utility
542Cited by
13References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1996 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Aug 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H resptively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.