Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness
US5877529A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1997 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Nov 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
Improved power MOSFET structure, and fabrication process are disclosed in this invention to achieve higher breakdown voltage and improved device ruggedness. The power transistor includes a core cell area which includes a plurality of power transistor cells and a termination area. The power transistor further includes an outer pickup guarding ring, disposed in the termination area guarding the core cell area, for picking up free charged-particles generated in the termination area for preventing the free charged particles from entering the core cell area. In another preferred embodiment, the power transistor further includes an inner pickup guarding fence and blocks, disposed between the termination area and the core cell area for picking up free charged-particles not yet picked up by the outer pickup guarding ring for preventing the free charged particles from entering the core cell area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.