Heat treatment apparatus for semiconductor wafers
US5878191A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 1995 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | May 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat treatment apparatus for semiconductor wafers includes a reaction chamber, a heater, a heat-insulating member, a first cooling gas path, a second cooling gas path, a blower and a controller. The reaction chamber houses semiconductor wafers. The heater is provided outside the reaction chamber to heat it. The heat-insulating member is provided outside the heater to keep the temperature of the reaction chamber. The first cooling gas path is interposed between the reaction chamber and heater, while the second cooling gas path is disposed between the heater and heat-insulating member. The blower allows gas to flow through the first and second gas paths to cool the reaction chamber. The controller controls the heater to increase the temperature of the reaction chamber and does the blower to decrease the temperature thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.