Semiconductor fabricating apparatus, method for controlling oxygen concentration within load-lock chamber and method for generating native oxide
US5879415A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 21, 1998 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Jan 21, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S414/139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor fabricating apparatus comprises a reaction tube defining a space for heat treating a silicon wafer, heater means disposed to extend around the reaction tube, a load-lock chamber connected to the reaction tube by means of a gate valve, a supply pipe communicating with the load-lock chamber for supplying an inert gas and a gas including oxygen thereto, an oxygen densitometer, an inert gas flow rate adjuster and an oxygen flow rate regulator, and based on the results detected by the oxygen densitometer, controls the flow rate of the inert gas and the gas including oxygen, by means of the flow rate adjuster, the flow rate regulator, to maintain the oxygen concentration within the load-lock chamber at a desire value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.