Geometries and configurations for magnetron sputtering apparatus
US5879519A · kind A · utility
35Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1996 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Aug 16, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/58
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film coating system incorporates separate, separately-controlled deposition and reaction zones for depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated deposition and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.