Film-forming method for X-ray mask
US5879840A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1997 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Aug 1, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/545
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film-forming method and an apparatus for a X-ray mask and a film-forming apparatus which are able to diminish stress unevenness in the X-ray mask to zero when a X-ray absorber is formed on a mask substrate by sputtering a target 3 during rotation of the mask substrate. Firstly, a dummy mask substrate is prepared instead of a mask substrate. A dummy X-ray absorber 6 is formed on this dummy X-ray substrate 5 within a sputtering range. Secondly, a stress distribution is measured at every position along a straight line passing through a center of the dummy X-ray absorber 6 and then a desirable stress distribution range X is selected at such a location so as to have a good linear characteristic in a portion of a compressive stress curve which decreases toward an outer periphery of the dummy X-ray absorber 6 in the stress distribution. A center of the desirable stress distribution range X is selected as a rotation center, the mask substrate is placed within the desirable stress distribution range X, and the X-ray absorber is formed by this film-forming technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.