Method for forming resist patterns by using an ammonium or morpholine compound as a developer
US5879851A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1996 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Oct 8, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/322
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming resist patterns comprising coating a resist comprising a polymeric or copolymeric compound having a repeating unit comprising a protected alkali-soluble group in which the protecting group is cleaved with an acid so that the compound is made alkali-soluble, and an acid generator capable of generating an acid upon the radiation exposure to a substrate to be fabricated, then pre-baking the formed resist film, successively selectively exposing the resist film, thereafter, developing a latent image with a developer containing an aqueous or alcoholic solution of a specified ammonium compound or morpholine compound. According to this method, crack formation and peeling of a pattern can be suppressed at the time of forming resist patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.