Pattern forming method
US5879863A · kind A · utility
9Cited by
14References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1997 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Jan 22, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/085
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a method of forming a pattern, comprising the steps of forming an underlying film on a semiconductor substrate, bringing a vapor of a neutralizer, which generates an acid upon exposure to light, into contact with the surface of the underlying film so as to form a primer layer, coating the primer layer with a chemical amplification resist, and selectively exposing the resist layer to light, followed by developing to form a resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.