Crown capacitor using a tapered etch of a damascene lower electrode
US5879985A · kind A · utility
55Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1997 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Mar 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A structure and process for fabricating a crown capacitor using a tapered etch and chemical mechanical polishing to form a bottom electrode having an increased area and crown is provided. The tapered etch is used to form a trough in an interlevel dielectric, e.g. SiO.sub.2, and is performed over contact hole forming a crown-like structure. The trough and, optionally, the crown are then covered by a conductor, which is patterned by chemical mechanical polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.