Method of passivating semiconductor devices and the passivated devices
US5880029A · kind A · utility
8Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1996 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Dec 27, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of passivating semiconductor devices including the steps of providing a semiconductor device having a surface of semiconductor material to be passivated, exposing the surface of semiconductor material to deep ultra-violet (DUV) radiation in an ambiance including oxygen so as to form a layer of oxide on the surface of semiconductor material, and forming a layer of passivation material on the layer of oxide. The DUV oxide forms a different interface with the semiconductor material which significantly improves operating characteristics of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.