Kurt Eisenbeiser
28Patents
13h-index
33Co-inventors
81Inventor score
Filing activity: Sep 12, 1996 → May 5, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6156611A | Method of fabricating vertical FET with sidewall gate electrode | Electricity | 170 | Expired |
| US6309918A | Manufacturable GaAs VFET process | Emerging Cross-Sectional Technologies | 61 | Expired |
| US6638838B1 | Semiconductor structure including a partially annealed layer and method of forming the same | Electricity | 44 | Expired |
| US6432546B1 | Microelectronic piezoelectric structure and method of forming the same | Electricity | 32 | Expired |
| US7005717B2 | Semiconductor device and method | Electricity | 30 | Expired |
| US6555946B1 | Acoustic wave device and process for forming the same | Electricity | 28 | Expired |
| US6091621A | Non-volatile multistate memory cell using a ferroelectric gate fet | Physics | 23 | Expired |
| US6482538B2 | Microelectronic piezoelectric structure and method of forming the same | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6791125B2 | Semiconductor device structures which utilize metal sulfides | Electricity | 20 | Expired |
| US7105866B2 | Heterojunction tunneling diodes and process for fabricating same | Electricity | 17 | Expired |
| US7067856B2 | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same | Electricity | 16 | Expired |
| US6057566A | Semiconductor device | Electricity | 14 | Expired |
| US6960509B1 | Method of fabricating three dimensional gate structure using oxygen diffusion | Electricity | 14 | Expired |
| US6693298B2 | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same | Electricity | 9 | Expired |
| US6262451A | Electrode structure for transistors, non-volatile memories and the like | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6590236B1 | Semiconductor structure for use with high-frequency signals | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5880029A | Method of passivating semiconductor devices and the passivated devices | Electricity | 8 | Expired |
| US6563118B2 | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same | Electricity | 7 | Expired |
| US6365474B1 | Method of fabricating an integrated circuit | Electricity | 5 | Expired |
| US8168318B2 | Method for high volume manufacturing of thin film batteries | Emerging Cross-Sectional Technologies | 5 | Active |
| US7682733B2 | Thin film battery having textured layer | Emerging Cross-Sectional Technologies | 4 | Active |
| US10147557B2 | Enhanced structural supercapacitors | Emerging Cross-Sectional Technologies | 1 | Active |
| US5856684A | High power HFET with improved channel interfaces | Electricity | 1 | Expired |
| US7776386B2 | Method for forming a micro fuel cell | Emerging Cross-Sectional Technologies | 1 | Active |
| US10991935B2 | Structural lithium-ion batteries with carbon fiber electrodes | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.