Method and apparatus for manufacturing a semiconductor device
US5880032A · kind A · utility
12Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1996 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Jul 30, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device comprises the steps of introducing a first gas containing steam or alcohol into a processing vessel housing a semiconductor substrate, and introducing a hydrogen fluoride gas as a second gas into the processing vessel after stopping introduction of the first gas into the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.