Semiconductor device including Gallium nitride layer
US5880485A · kind A · utility
76Cited by
5References
8Claims
0Family size
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Key dates
| Filing date | Sep 11, 1997 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Sep 11, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high-quality gallium nitride layer is grown on a surface of a substrate which is exposed through a dielectric mask on the substrate. The high-quality gallium nitride layer has a composition expressed by the chemical formula: EQU Ga.sub.x Al.sub.y In.sub.z N (I) wherein 0<x.ltoreq.1, 0.ltoreq.y<1, 0.ltoreq.z<1, and x+y+z=1. An aluminum nitride thin layer is interposed between neighboring pairs of gallium nitride selectively grown layers and has a composition expressed by the following chemical formula: EQU Al.sub.x Ga.sub.1-x N (II) wherein 0.7<x.ltoreq.1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.