Active pixel with a pinned photodiode
US5880495A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 8, 1998 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Jan 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
An active pixel for use in an imaging array and formed in a semiconductor substrate having a first conductivity type. The active pixel comprises: a pinned photodiode formed in the semiconductor substrate; a transfer well having a second conductivity type formed in the substrate, the transfer well being adjacent to the pinned photodiode; a transfer gate adjacent the transfer well, the transfer gate for controlling the flow of a signal charge from the pinned photodiode through the transfer well and under the transfer gate; and an output well adjacent the transfer gate for receiving the signal charge and routing the signal charge to output circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.