Datong Chen
43Patents
17h-index
49Co-inventors
81Inventor score
Filing activity: Mar 15, 1994 → May 13, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5880495A | Active pixel with a pinned photodiode | Electricity | 124 | Expired |
| US5439833A | Method of making truly complementary and self-aligned bipolar and CMOS transistor structures with minimized base and gate resistances and parasitic capacitance | Emerging Cross-Sectional Technologies | 66 | Expired |
| US6365447B1 | High-voltage complementary bipolar and BiCMOS technology using double expitaxial growth | Electricity | 65 | Expired |
| US5960131A | Switching element having an expanding waveguide core | Physics | 64 | Expired |
| US6128039A | Column amplifier for high fixed pattern noise reduction | Electricity | 56 | Expired |
| US6055344A | Fabrication of a total internal reflection optical switch with vertical fluid fill-holes | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6324316A | Fabrication of a total internal reflection optical switch with vertical fluid fill-holes | Emerging Cross-Sectional Technologies | 39 | Expired |
| US5411913A | Simple planarized trench isolation and field oxide formation using poly-silicon | Electricity | 34 | Expired |
| US6727946B1 | APS soft reset circuit for reducing image lag | Electricity | 33 | Expired |
| US5385861A | Planarized trench and field oxide and poly isolation scheme | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6339248B1 | Optimized floating P+ region photodiode for a CMOS image sensor | Electricity | 27 | Expired |
| US5683932A | Method of fabricating a planarized trench and field oxide isolation structure | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6121817A | Analog median filter circuit for image processing | Electricity | 26 | Expired |
| US6486521B2 | Optimized floating P+ region photodiode for a CMOS image sensor | Electricity | 21 | Expired |
| US5901257A | Single chip color MOS image sensor with two line reading structure and improved color filter pattern | Electricity | 21 | Expired |
| US5827762A | Method for forming buried interconnect structue having stability at high temperatures | Electricity | 18 | Expired |
| US5691232A | Planarized trench and field oxide isolation scheme | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5681776A | Planar selective field oxide isolation process using SEG/ELO | Electricity | 16 | Expired |
| US5751189A | Charge amplifier for MOS imaging array and method of making same | Electricity | 16 | Expired |
| US6580849B2 | Optical switch incorporating stepped faceted mirrors | Physics | 15 | Expired |
| US6917739B2 | Optical cache memory | Electricity | 13 | Expired |
| US6289139A | Single chip color CMOS image sensor with two or more line reading structure | Electricity | 12 | Expired |
| US6035077A | Single-chip color CMOS image sensor with two or more line reading structure and high-sensitivity interlace color structure | Electricity | 11 | Expired |
| US6404460B1 | Edge enhancement with background noise reduction in video image processing | Electricity | 10 | Expired |
| US5724095A | Charge amplifier for MOS imaging array and method of making same | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.