Chemical vapor deposition of II/VI semiconductor material using triisopropylindium as a dopant
US5882805A · kind A · utility
6Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 1994 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | May 18, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/064
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Triisopropylindium ((CH.sub.3).sub.2 CH).sub.3 In is used as an n-type dopant for II/VI semiconductor materials. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations in the range of the low 10.sup.15 cm.sup.-3 and does not exhibit an appreciable memory effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.