Method for probing the error of energy and dosage in the high-energy ion implantation
US5882947A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Aug 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for probing the error of energy or dosage in the high-energy ion implantation is disclosed herein. The error source that is from either the energy of ion implantation or the dosage of ion implantation non-normal is decided via the thermal signal value and the thickness of the remained oxidation layer after etching step. The error source can be decided by using different decision standards for phosphorous ion implantation or boron ion implantation. The method comprises the steps as follow: a semiconductor silicon wafer is provided as a test wafer, and an oxidation layer is then formed over the test wafer. A high-energy ion implantation, such as phosphorous ion implantation or boron ion implantation is performed. The oxidation layer is etched via an etching process in a fixing etching time. The thickness of the remained oxidation layer after the etching process is probed. A thermal probe is applied to probe the thermal wave signal from the ion-implant-induced damage. Afterward, the thermal wave signal value and the remained oxidation thickness of the high-energy ion implantation are compared with that of a preceding standard group. Then, the different decision standards crea…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.