Semiconductor device including quantum wells or quantum wires and method of making semiconductor device
US5882952A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Jul 17, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/953
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes: forming multiatomic steps by MOCVD on a (110) semiconductor substrate inclined at an angle toward the 001! direction or the 111! direction; and growing at least one double heterostructure including a first compound semiconductor and a second compound semiconductor having a smaller band gap than the first compound semiconductor to form quantum wires of the second compound semiconductor at edges of the multiatomic steps. Multiatomic steps having step edges along the longitudinal direction of the wire have improved linearity, and thus, quantum wires can be fabricated with improved controllability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.