Method of manufacturing semiconductor components

US5882963A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Martin Kerber · Munich, DE
• Helmut Klose · Munich, DE
• Andreas Vom Felde · Beacon, US

Key dates

• Filing date: Aug 12, 1997
• Grant date: Mar 16, 1999
• Expiry date: Aug 12, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of manufacturing a semiconductor component, wherein capacitances occurring between contacts, interconnects or metallizations are reduced by filling cavities with air or gas is provided. The cavities are produced between the semiconductor material and a passivation layer in a region wherein the interconnects are surrounded by dielectric and are subsequently closed by a further passivation layer.